* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1
* S
VB20120SG Datasheet (218.06 KB)
VB20120SG
218.06 KB
High-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product V20120SG, VF20120SG, VB20120SG & VI20120SG Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Re.
📁 Related Datasheet
VB20120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120SG-M3 High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
