VB20120SG - High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB20120SG
Manufacturer	Vishay ↗
File Size	218.06 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20120SG_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1.
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB, and TO-262AA package).
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC TYPI.

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Published: Feb 2, 2012 |