VB20120SG Datasheet - Vishay

VB20120SG High-Voltage Trench MOS Barrier Schottky Rectifier

VB20120SG Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) 2 V20120SG PIN 1 PIN 2 CASE 3 1 VF20120SG PIN 1 PIN 2 2 3 1

* S

Datasheet Details

VB20120SG

218.06 KB

High-voltage trench mos barrier schottky rectifier.

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