Datasheet4U Logo Datasheet4U.com

VB20120S Datasheet - Vishay

VB20120S High-Voltage Trench MOS Barrier Schottky Rectifier

VB20120S Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder

VB20120S Datasheet (224.25 KB)

Preview of VB20120S PDF
VB20120S Datasheet Preview Page 2 VB20120S Datasheet Preview Page 3

Datasheet Details

Part number:

VB20120S

Manufacturer:

Vishay ↗

File Size:

224.25 KB

Description:

High-voltage trench mos barrier schottky rectifier.

📁 Related Datasheet

VB20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20120SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20120SG-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20120SG-M3 High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VB20120S High-Voltage Trench MOS Barrier Schottky Rectifier Vishay

VB20120S Distributor