VB20120S - High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB20120S
Manufacturer	Vishay ↗
File Size	224.25 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20120S_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder dip 260 °C, 40 s (for TO-220AB, ITO-220AB and TO-262AA package).
Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC.

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Published: Feb 2, 2012 |