* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation 2 V20120S PIN 1 PIN 2 CASE 3 1 VF20120S PIN 1 PIN 2 2 3
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder
VB20120S Datasheet (224.25 KB)
VB20120S
224.25 KB
High-voltage trench mos barrier schottky rectifier.
www.DataSheet.co.kr New Product V20120S, VF20120S, VB20120S & VI20120S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectif.
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