VB2212N - P-Channel MOSFET
(VBsemi)
001
VB2212N
P-Channel 20 V (D-S) MOSFET
.VBsemi.
PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = - 10 V RDS(on) () at VGS = - 4.5 V ID (A) Con.
VB20100C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
.vishay.
V20100C, VF20100C, VB20100C, VI20100C
Vishay General Semiconductor
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low .
VB20100C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3
.vishay.
Vishay General Semiconductor
Dual High Voltage Trench MOS Barrier Schottky Rectifi.
VB20100S - High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
.DataSheet.co.kr
New Product
V20100S, VF20100S, VB20100S & VI20100S
Vishay General Semiconductor
High-Voltage Trench MOS Barrier Schottky Rectif.
VB20100S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3
.vishay.
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ul.
VB20100SG - High-Voltage Trench MOS Barrier Schottky Rectifier
(Vishay)
V20100SG, VF20100SG, VB20100SG, VI20100SG
.vishay.
Vishay General Semiconductor
High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low .