VB20100S-E3 Datasheet - Vishay

VB20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier

V20100S-E3, VF20100S-E3, VB20100S-E3, VI20100S-E3 www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.446 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100S 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20100S 123 PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100S NC K A HEATSINK DESIGN SUPPORT TOOLS VI20100S PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS IF(AV) VRRM IF.

VB20100S-E3 Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Low thermal resistance

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C max

VB20100S-E3 Datasheet (200.83 KB)