* Trench MOS Schottky technology
* Low forward voltage drop, low power losses
* High efficiency operation
* Low thermal resistance
* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
* Solder bath temperature 275 °C max
VB20100SG Datasheet (202.11 KB)
VB20100SG
202.11 KB
High-voltage trench mos barrier schottky rectifier.
V20100SG, VF20100SG, VB20100SG, VI20100SG www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low .
📁 Related Datasheet
VB20100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120C-M3 Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
VB20120SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)
