VB20100SG Datasheet - Vishay

VB20100SG High-Voltage Trench MOS Barrier Schottky Rectifier

V20100SG, VF20100SG, VB20100SG, VI20100SG www.vishay.com Vishay General Semiconductor High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100SG 3 2 1 PIN 1 PIN 2 PIN 3 CASE TO-263AB K 123 VF20100SG PIN 1 PIN 2 PIN 3 TO-262AA K A NC VB20100SG NC K A HEATSINK VI20100SG 3 2 1 PIN 1 PIN 2 PIN 3 K PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 100 V IFSM 150 A VF at IF = 20 A 0.75 V TJ max. Package 150 °C TO.

VB20100SG Features

* Trench MOS Schottky technology

* Low forward voltage drop, low power losses

* High efficiency operation

* Low thermal resistance

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Solder bath temperature 275 °C max

VB20100SG_Vishay.pdf