VB20100C-E3 Datasheet (Vishay) - Dual High Voltage Trench MOS Barrier Schottky Rectifier

VB20100C-E3, Dual High Voltage Trench MOS Barrier Schottky Rectifier

V20100C-E3, VB20100C-E3, VF20100C-E3, VI20100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.50 V at IF = 5 A TO-220AB TMBS ® ITO-220AB V20100C 3 2 1 PIN 1 PIN 2 PIN 3 CASE D2PAK (TO-263AB) K VF20100C 123 PIN 1 PIN 2 PIN 3 TO-262AA K 2 1 VB20100C PIN 1 K PIN 2 HEATSINK DESIGN SUPPORT TOOLS VI20100C PIN 1 3 2 1 PIN 2 PIN 3 K click logo to get started Models Available PRIMARY CHARACTERISTICS

VB20100C-E3 Features

* Trench MOS Schottky technology

* Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)

* Low forward voltage drop, low power losses

* High efficiency operation

* Solder bath temperature 275 °C maximum 10 s, per JESD 22-B106 (for