VB20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

Datasheet Details

Part number	VB20120C
Manufacturer	Vishay ↗
File Size	220.33 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20120C_Vishay.pdf

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package).
Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB, ITO-220AB and TO-262AA package).
Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC.

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Published: Mar 28, 2012 |