Datasheet4U.com

VB20120C-M3 - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

📥 Download Datasheet

VB20120C-M3 Datasheet Preview — Preview of VB20120C-M3 PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	VB20120C-M3
Manufacturer	Vishay ↗
File Size	97.04 KB
Description	Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20120C-M3-Vishay.pdf

VB20120C-M3 Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

📁 VB20120C-M3 Similar Datasheet

VB2101K - P-Channel MOSFET (VBsemi)
VB2120 - P-Channel MOSFET (VBsemi)
VB2212N - P-Channel MOSFET (VBsemi)
VB2290 - P-Channel MOSFET (VBsemi)
VB2355 - P-Channel MOSFET (VBsemi)
VB2405D-1W - DC-DC CONVERTER (YUAN)
VB2405D-2W - DC-DC CONVERTER (YUAN)
VB2405S-1W - DC-DC CONVERTER (YUAN)

Other Datasheets by Vishay

VB20120C-E3 - Dual High Voltage Trench MOS Barrier Schottky Rectifier
VB20120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120S - High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120S-E3 - High Voltage Trench MOS Barrier Schottky Rectifier
VB20120SG - High-Voltage Trench MOS Barrier Schottky Rectifier
VB20120SG-E3 - High Voltage Trench MOS Barrier Schottky Rectifier

Published: May 4, 2020 |