Datasheet4U Logo Datasheet4U.com
7 views

VB2610N Datasheet - VBsemi

VB2610N P-Channel MOSFET

VB2610N Features

* Halogen-free According to IEC 61249-2-21 Definition

* TrenchFET® Power MOSFET

* Compliant to RoHS Directive 2002/95/EC S G D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuo

VB2610N Datasheet (277.61 KB)

Preview of VB2610N PDF
VB2610N Datasheet Preview Page 2 VB2610N Datasheet Preview Page 3

Datasheet Details

Part number:

VB2610N

Manufacturer:

VBsemi

File Size:

277.61 KB

Description:

P-channel mosfet.

📁 Related Datasheet

VB2658 P-Channel MOSFET (VBsemi)

VB20100C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20100C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20100S High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20100S-E3 High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20100SG High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

VB20120C-E3 Dual High Voltage Trench MOS Barrier Schottky Rectifier (Vishay)

TAGS

VB2610N P-Channel MOSFET VBsemi

VB2610N Distributor