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VB20120SG-M3 - High-Voltage Trench MOS Barrier Schottky Rectifier

Vishay

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Datasheet Details

Part number	VB20120SG-M3
Manufacturer	Vishay ↗
File Size	94.92 KB
Description	High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet	VB20120SG-M3-Vishay.pdf

VB20120SG-M3 Product details

Features

Trench MOS Schottky technology.
Low forward voltage drop, low power losses.
High efficiency operation.
Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C.
Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Published: May 4, 2020 |