.
STMicroelectronics
BYW98-100 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW 98-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY .
Sirectifier Semiconductors
HUR2X30-120 - (HUR2X30-100 / HUR2X30-120) High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR2x30-100, HUR2x30-120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H.
Toshiba Semiconductor
TVR4N - TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak .
STMicroelectronics
BYW51200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
® BYW51/F/G/FP-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND .
STMicroelectronics
BYW98-200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
BYW 98-50 →200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES VERY LOW CONDUCTION LOSSES NEGLIGIBLE SWITCHING LOSSES LOW FORWARD AND REVERSE RECOVERY .
STMicroelectronics
BYW77G200 - HIGH EFFICIENCY FAST RECOVERY DIODES
® BYW77G-200 HIGH EFFICIENCY FAST RECOVERY DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr VF 25 A 200 V 50 ns 0.85 V 1&3 4 4 2 FEATURES AND .
STMicroelectronics
BYW98-200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
® BYW98-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFIT.
STMicroelectronics
BYW98200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
® BYW98-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) trr (max) FEATURES AND BENEFIT.
Central Semiconductor
CMPD7005C - SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
PRELIMINARCCCCMMMMYPPPPDDDD7777000000005555ACS SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE CentralTM Semiconductor Corp. DESCRIPTION: The.
Sirectifier Semiconductors
HUR2X100-40 - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR2x100-40 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions SOT-227(ISOTOP) Dim. A B C D E F G H J K L M N O .
Sirectifier Semiconductors
HUR30100PT - High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode
HUR30100PT, HUR30120PT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C(TAB) A C A C A Dimensions TO-247AD Dim. A .
CHONGQING PINGYANG ELECTRONICS
RFC4K - (RFC2K - RFC4K) HIGH VOLTAGE FAST RECOVERY RECTIFIER
www.DataSheet4U.com CHONG PINGYANG ELECTRONICS CO.,LTD. RFC2K THRU RFC4K HIGH VOLTAGE FAST RECOVERY RECTIFIER VOLTAGE：2000-3000V CURRENT：0.2A FEATU.
United Monolithic Semiconductors
CHA2394-99F - 36-40GHz Very Low Noise High Gain Amplifier
CHA2394-99F 36-40GHz Very Low Noise High Gain Amplifier GaAs Monolithic Microwave IC Description The CHA2394-99F is a three-stage monolithic low noi.
STMicroelectronics
BYV541V-200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES
® BYV54V BYV541V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCH.
STMicroelectronics
BYW100-200 - HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE
® BYW100-200 HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODE MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) 1.5 A 200 V 150 °C 0.85 V FEA.
Central Semiconductor
CMPD7005S - SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
PRELIMINARCCCCMMMMYPPPPDDDD7777000000005555ACS SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE CentralTM Semiconductor Corp. DESCRIPTION: The.
Central Semiconductor
CMPD7005A - SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE
PRELIMINARCCCCMMMMYPPPPDDDD7777000000005555ACS SURFACE MOUNT VERY HIGH VOLTAGE SILICON SWITCHING DIODE CentralTM Semiconductor Corp. DESCRIPTION: The.
