WPM Datasheet | Specifications & PDF Download

WTM2306 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2306 uses advanced trench technology to provide excellent RDS(ON), This device is

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WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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WPM6207 Single P-Channel, -20V, -5.7A, Power MOSFET VDS (V) -20 Max Rds(on) (mΩ) 30@ VGS=–4.5V 40@ VGS=–2.5V 60@ VGS=–1.8V Descriptions The WPM620

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WPM2005B Power MOSFET and Schottky Diode Features z Featuring a MOSFET and Schottky Diode z Independent Pinout to each Device to Ease Circuit Design

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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WPM4803-8 TR-VB WPM4803-8 TR-VB Datasheet Dual P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 0.035 at VGS = - 10 V 0.045

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WPMD2012 Dual P-Channel, -20V, -0.64A, Small Signal MOSFET VDS (V) -20 Rds(on) (ȍ) 0.550@ VGS=-4.5V 0.740@ VGS=-2.5V 0.910@ VGS=-1.8V Descriptions

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WPMDB1200362Q / 171020302 MagI3C Power Module VDRM – Variable Step Down Regulator Module 2.95 – 6V / 2A / 0.8 – 3.6V Output DESCRIPTION The VDRM 1710

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WPM2014 WPM2014 Single P-Channel, -20V, -4.9A, Power MOSFET Http//:www.sh-willsemi.com VDS (V) -20 Rds(on) (Ω) 0.050 @ VGS=–4.5V 0.063 @ VGS=–2.5

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WPM3021 Single P-Channel, -30V, -11.5A, Power MOSFET VDS (V) -30 Typical RDS(on) (mΩ) 11@ VGS=-10V 15@VGS=-5V Descriptions The WPM3021 is P-Channel

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WTM20N65AF,WTM20N65AP,WTM20N65AZ, WTM20N65AT,WTM20N65AMP,WTM20N65AGF FEATURES ⚫ BVDSS=650V, ID=20A ⚫RDS(on):0.17Ω(Max)@VGS=10V ⚫ Very low FOM RDS(on)

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WTM2305 P-Channel Enhancement Mode Power MOSFET Description ■ The WTM2305 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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WPMD2011 Dual P-Channel -20V, -4.4A, 52mȍ Power MOSFET V(BR)DSS -20 Rds(on) (Ÿ) 0.052 @ -4.5V 0.064 @ -2.5V 0.080 @ -1.8V 0.090 @ -1.5V Description

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WPM2087 Single P-Channel, -20V, -4.3A, Power MOSFET WPM2087 Http://www.sh-willsemi.com VDS (V) -20 Typical RDS(on) (mΩ) 34@ VGS=-4.5V 39 @ VGS=-3.1

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WPM2009D -20V, -4A, 42mŸ, 2.0W, DFN3x3, P-MOSFET Descriptions This single P-Channel MOSFET is produced using trench process that provides minimum on r

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WTM2302 N-Channel Enhancement Mode Power MOSFET Description ■ The WTM2302 uses advanced trench technology to provide excellent RDS(ON), low gate charg

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WPM3005 Single P-Channel, -30V, -4.1A, Power MOSFET WPM3005 Http://www.sh-willsemi.com VDS (V) -30 Rds(on) (ȍ) 0.057@ VGS=̢10.0V 0.057@ VGS=̢10.0V

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WPM2049 Single P-Channel, -20V, -0.51A, Power MOSFET VDS (V) -20 Typical Rds(on) (Ω) 0.480@ VGS=-4.5V 0.620@ VGS=-2.5V 0.780@ VGS=-1.8V WPM2049 Ht

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WPM3012 Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) -30 Rds(on) (ȍ) 0.058@ VGS= 10V 0.080@ VGS= 4.5V Descriptions The WPM3012 is P-Channel

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