WS-9-1-01 Datasheet | Specifications & PDF Download

www.DataSheet4U.com RoHS Compliant MASWSS0167 V2 Functional Schematic 2.5 V GaAs SPDT Switch 0.5 - 3.0 GHz Features • • • • • • • • Low Voltage Oper

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AiT Semiconductor Inc. WSL www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

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AiT Semiconductor Inc. WSL www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

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WSB20100T/WSB20100TF Power Schottky Barrier Rectifier Features  2x10A average rectified forward current  Low forward voltage and Low leakage current

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www.vishay.com WSC, WSN Vishay Dale Wirewound Resistors, Precision Power, Surface Mount FEATURES • All welded construction • Molded encapsulation

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www.vishay.com WSC, WSN Vishay Dale Wirewound Resistors, Precision Power, Surface Mount FEATURES • All welded construction • Molded encapsulation

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1710nm~1720nm 1W Laser Diode with E-mount Package | FAC Lens Optional | High Power LD 1720nm~1725nm 1W Output Power | Hermetic Package Optional | Squ

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AiT Semiconductor Inc. WSI www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

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WST3401A P-Ch MOSFET General Description Product Summery The WST3401A is the highest performance trench P-Ch MOSFET with extreme high cell density

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WSB10100T Power Schottky Barrier Rectifier Features WSB10100T Http://www.sh-willsemi.com  2x5A average rectified forward current  Low forward volt

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Issued date: 2007/12/20 Doc. No: 07122003 PRODUCT SPECIFICATION www.DataSheet4U.com MODEL: WST018QQAA1 < ◇ > PRELIMINARY SPECIFICATION < ◆ > APPROVA

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Features  Low forward voltage drop  Guard ring construction for transient protection  Negligible reverse recovery time  Low reverse capacitance G

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AiT Semiconductor Inc. WSL www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

(8 views)

AiT Semiconductor Inc. WSI www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

(8 views)

AiT Semiconductor Inc. WSI www.ait-ic.com WIRE WOUND SMD INDUCTOR ●FEATURE 1. High performance (Isat) realized by metal dust core. 2. Low loss rea

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WSB20100T/WSB20100TF Power Schottky Barrier Rectifier Features  2x10A average rectified forward current  Low forward voltage and Low leakage current

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Approval TO : DATE : November. 13. 2007 SAMSUNG TFT-LCD MODEL NO. : LTS480WS-C01 Customer Approval Any Modification of Spec is not allowed without

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Upgrade for Wider Resistance Range to WFM www.vishay.com WSLP Vishay Dale Power Metal Strip® Resistors, Very High Power (to 3 W), Low Value (Down to

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MASWSS0157 GaAs SPDT Switch DC - 2.5 GHz Features  Very Low DC Power Consumption: 100 µW  Low Insertion Loss: 0.5 dB  High Isolation: 25 dB up to

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www.vishay.com WSLT2010 18 Vishay Dale Power Metal Strip® Resistors High Temperature (275 °C), High Power (1 W), Low Value (down to 0.01 ), Surfa

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