XP152A12COMR Datasheet | Specifications & PDF Download

20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A RDS(ON), Vgs@-2.5V, Ids@-2.0A 130mΩ 190mΩ Features Advanced trench pr

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P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.3Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package A

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