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XP152A12COMR Power MOS FET

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Description

P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.3Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package A.
The XP152A12C0MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

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Features

* Low on-state resistance : Rds (on) = 0.3 Ω ( Vgs = -4.5V ) Rds (on) = 0.5 Ω ( Vgs = -2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -2.5V High density mounting : SOT - 23 Pin Configuration Pin Assignment D 3 u PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate S

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