XP152A12C0MR-G Datasheet - Torex Semiconductor

XP152A12C0MR-G POWER MOS FET

The XP152A12C0MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 pa.

XP152A12C0MR-G Features

* Low On-State Resistance : Rds(on) = 0.3Ω@ Vgs = -4.5V : Rds(on) = 0.5Ω@ Vgs = -2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : -2.5V P-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free

* PIN C

XP152A12C0MR-G Datasheet (307.17 KB)