XP1507
Panasonic Semiconductor
31.90 KB
Silicon npn epitaxial planer transistor.
Composite Transistors
XP1507
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0..
1 0.425
0.2±0.05 0.12 * 0.02
+0.05
High breakdown voltage and for low noise amplification
0.65
s .
📁 Related Datasheet
XP1501 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP1501
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For general am.
XP1504 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP1504
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For amplificat.
XP1504 - Silicon NPN Transistor
(Panasonic Semiconductor)
Composite Transistors
XP01504 (XP1504)
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
(0.425)
0.20±0.0.
XP151A11B0MR - POWER MOS FET
(Torex Semiconductor)
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.17Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Packa.
XP151A11B0MR-G - Power MOSFET
(Torex Semiconductor)
XP151A11B0MR-G
Power MOSFET
ETR1117_003
■GENERAL DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra .
XP151A12A2MR - Power MOS FET
(TOREX)
N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package
A.
