XP1507 Datasheet, Transistor, Panasonic Semiconductor

XP1507 Features

  • Transistor q q Two elements incorporated into one package. (Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half. 2.0±0.1 1 2 3 5 0.65 4 0.9± 0.1 q 2S

PDF File Details

Part number:

XP1507

Manufacturer:

Panasonic Semiconductor

File Size:

31.90kb

Download:

📄 Datasheet

Description:

Silicon npn epitaxial planer transistor.

Datasheet Preview: XP1507 📥 Download PDF (31.90kb)
Page 2 of XP1507

TAGS

XP1507
Silicon
NPN
epitaxial
planer
transistor
Panasonic Semiconductor

📁 Related Datasheet

XP1501 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Composite Transistors XP1501 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For general am.

XP1504 - Silicon NPN epitaxial planer transistor (Panasonic Semiconductor)
Composite Transistors XP1504 Silicon NPN epitaxial planer transistor Unit: mm 2.1±0.1 0.425 1.25±0.1 0.425 0.2±0.05 0.12 – 0.02 +0.05 For amplificat.

XP1504 - Silicon NPN Transistor (Panasonic Semiconductor)
Composite Transistors XP01504 (XP1504) Silicon NPN epitaxial planer transistor Unit: mm For amplification of low frequency output (0.425) 0.20±0.0.

XP151A11B0MR - POWER MOS FET (Torex Semiconductor)
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.17Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Packa.

XP151A11B0MR-G - Power MOSFET (Torex Semiconductor)
XP151A11B0MR-G Power MOSFET ETR1117_003 ■GENERAL DESCRIPTION The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra .

XP151A12A2MR - Power MOS FET (TOREX)
N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package A.

XP151A12A2MR-G - Power MOSFET (TOREX)
XP151A12A2MR-G Power MOSFET ETR1118_003 ■GENERAL DESCRIPTION The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra .

XP151A13A0MR - Power MOS FET (Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switc.

XP151A13A0MR-G - Power MOSFET (Torex Semiconductor)
XP151A13A0MR-G Power MOSFET ETR1119_003 ■GENERAL DESCRIPTION The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra .

XP152A01D8MR - Power MOS FET (Torex Semiconductor)
x P-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.48Ω MAX x Ultra High-Speed Switching x SOT-23 Package s Applications q Notebo.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts