XP151A13A0MR - Power MOS FET
The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 pac
XP151A13A0MR Features
* Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) Rds (on) = 0.15Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 1.5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 N - Channel MOS FET ( 1 d
