XP151A13A0MR Power MOS FET

Tuofeng Semiconductor

Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switc.
The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics.

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Datasheet Specifications

Part number: XP151A13A0MR
Manufacturer: Tuofeng Semiconductor
File Size: 84.44 KB
Datasheet: XP151A13A0MR-TuofengSemiconductor.pdf
Description: Power MOS FET

Features

* Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) Rds (on) = 0.15Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 1.5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 N - Channel MOS FET ( 1 d

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XP151A13A0MR Power MOS FET Tuofeng Semiconductor

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