XP151A13A0MR Datasheet - Tuofeng Semiconductor

Power MOS FET

XP151A13A0MR Features

* Low on-state resistance : Rds (on) = 0.1Ω ( Vgs = 4.5V ) Rds (on) = 0.15Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 1.5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 N - Channel MOS FET ( 1 d

XP151A13A0MR General Description

The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 pac.

XP151A13A0MR Datasheet (84.44 KB)

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Datasheet Details

Part number:

XP151A13A0MR

Manufacturer:

Tuofeng Semiconductor

File Size:

84.44 KB

Description:

Power mos fet.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switc.

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XP151A13A0MR Power MOS FET Tuofeng Semiconductor

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XP151A13A0MR Features

XP151A13A0MR General Description

Datasheet Details

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