XP151A12A2MR-G - Power MOSFET
The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 p
XP151A12A2MR-G Features
* Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V : Rds(on) = 0.16Ω@ Vgs = 2.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 2.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free
* PIN CON
