* Unit V µA µA V V MHz 0.1 0.1 500 2500 0.1 0.6 80 7 1.0 pF Ω Ron measuring circuit VB VV VA Ron= VB ✕1000(Ω) VA
* VB Note) The Part number in the Parenthesis shows conventional part number. 1 Composite Transistors PT
* Ta 500 XP01504 IC
* VCE 24 Ta=25˚C 120 VCE=2V 1
XP1504
Panasonic Semiconductor
391.66 KB
Silicon npn transistor.
Composite Transistors
XP01504 (XP1504)
Silicon NPN epitaxial planer transistor
Unit: mm
For amplification of low frequency output
(0.425)
0.20±0.0.
📁 Related Datasheet
XP1501 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP1501
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For general am.
XP1504 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP1504
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For amplificat.
XP1507 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP1507
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
High breakdown.
XP151A11B0MR - POWER MOS FET
(Torex Semiconductor)
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.17Ω (max) NUltra High-Speed Switching NGate Protect Diode Built-in NSOT-23 Packa.
XP151A11B0MR-G - Power MOSFET
(Torex Semiconductor)
XP151A11B0MR-G
Power MOSFET
ETR1117_003
■GENERAL DESCRIPTION
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra .
XP151A12A2MR - Power MOS FET
(TOREX)
N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package
A.
XP151A12A2MR-G - Power MOSFET
(TOREX)
XP151A12A2MR-G
Power MOSFET
ETR1118_003
■GENERAL DESCRIPTION
The XP151A12A2MR-G is an N-channel Power MOSFET with low on state resistance and ultra .
XP151A13A0MR - Power MOS FET
(Tuofeng Semiconductor)
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
N-Channel Power MOS FET DMOS Structure
Low On-State Resistance : 0.1Ω (max)
Ultra High-Speed Switc.
