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XP151A11B0MR-G Power MOSFET

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Description

XP151A11B0MR-G Power MOSFET ETR1117_003 *GENERAL .
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.

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Features

* Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V : Rds(on) = 0.17Ω@ Vgs = 4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free
* PIN CON

Applications

* Notebook PCs
* Cellular and portable phones
* On-board power supplies
* Li-ion battery systems

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