XP151A11B0MR-G Datasheet - Torex Semiconductor

XP151A11B0MR-G Power MOSFET

The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 p.

XP151A11B0MR-G Features

* Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V : Rds(on) = 0.17Ω@ Vgs = 4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free

* PIN CON

XP151A11B0MR-G-TorexSemiconductor.pdf