XP151A11B0MR-G - Power MOSFET
The XP151A11B0MR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-23 p
XP151A11B0MR-G Features
* Low On-State Resistance : Rds(on) = 0.12Ω@ Vgs = 10V : Rds(on) = 0.17Ω@ Vgs = 4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Compliant, Pb Free
* PIN CON
