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XP151A12A2MR Power MOS FET

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Description

N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package A.
The XP151A12A2MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics.

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Datasheet Specifications

Part number
XP151A12A2MR
Manufacturer
TOREX
File Size
78.03 KB
Datasheet
XP151A12A2MR_TOREX.pdf
Description
Power MOS FET

Features

* Low on-state resistance : Rds (on) = 0.1 Ω ( Vgs = 4.5V ) Rds (on) = 0.16 Ω ( Vgs = 2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 2.5V High density mounting : SOT - 23 Pin Configuration Pin Assignment D 3 u PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Sou

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