XP151A13A0MR-G Datasheet - Torex Semiconductor

XP151A13A0MR-G Power MOSFET

The XP151A13A0MR-G is an N-channel Power MOSFET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 p.

XP151A13A0MR-G Features

* Low On-State Resistance : Rds(on) = 0.1Ω@ Vgs = 4.5V : Rds(on) = 0.14Ω@ Vgs = 2.5V : Rds(on) = 0.25Ω@ Vgs = 1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-23 Environmentally Friendly : EU RoHS Co

XP151A13A0MR-G-TorexSemiconductor.pdf