XP152A12C0MR Power MOS FET

Tuofeng Semiconductor

Description

Shenzhen Tuofeng Semiconductor Technology Co., Ltd P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.3Ω (max) Ultra High-Speed Switc.
The XP152A12C0MR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

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Datasheet Specifications

Part number: XP152A12C0MR
Manufacturer: Tuofeng Semiconductor
File Size: 77.29 KB
Datasheet: XP152A12C0MR-TuofengSemiconductor.pdf
Description: Power MOS FET

Features

* Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V ) Rds (on) = 0.5Ω ( Vgs = -2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -2.5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 P - Channel MOS FET

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XP152A12C0MR Power MOS FET Tuofeng Semiconductor

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