* Low on-state resistance : Rds (on) = 0.3Ω ( Vgs = -4.5V ) Rds (on) = 0.5Ω ( Vgs = -2.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : -2.5V High density mounting : SOT - 23 Pin Configuration D 3 12 GS SOT - 23 Top View Equivalent Circuit 3 12 P - Channel MOS FET
XP152A12C0MR Datasheet (77.29 KB)
XP152A12C0MR
Tuofeng Semiconductor
77.29 KB
Power mos fet.
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
P-Channel Power MOS FET DMOS Structure
Low On-State Resistance : 0.3Ω (max)
Ultra High-Speed Switc.
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