| Part Number | Description | Manufacture |
|---|---|---|
|
|
N-Channel Logic Level Enhancement Mode Field Effect Transistor 22.5 22.5 48 69 19 27 -55 to 150 UNIT V A mJ W °C MAXIMUM 2.6 1.8 62 55 27 25 UNIT °C / W 2019/8/27 p.1 EMB09A03HP ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MI |
 Excelliance MOS |
|
|
N-Channel Logic Level Enhancement Mode Field Effect Transistor 12.8 6.4 6.4 25 25 10 10 -55 to 150 UNIT V A mJ W °C MAXIMUM 5 5 90 90 50 50 UNIT °C / W 2019/03/01 p.1 EMB09A03VP ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT |
Excelliance MOS |
