| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor Product Summary: N-CH-Q1 N-CH-Q2 VDSS 30V 30V RDSON (MAX.) 9mΩ 9mΩ ID 16A 16A N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Gate-Source Voltage Continuous Drain Current TC = 25 °C TC = 100 °C Pul... |
| Features |
12.8
6.4
6.4
25
25
10
10
-55 to 150
UNIT V A
mJ W °C
MAXIMUM
5
5
90
90
50
50
UNIT °C / W
2019/03/01 p.1
EMB09A03VP
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER
SYMBOL
TEST CONDITIONS
LIMITS
UNIT
MIN TYP MAX
STATIC
Drain-Source Breakdown Voltage
V(BR)DSS
VGS = 0V, ID = 250A
Q1 30
V
Q2 30...
|
| Datasheet |
 EMB09A03VP Datasheet 968.58KB |
