.
SP5718AP - High precision primary side feedback switching power supply chip
SP5718AP DATA SHEET SP5718AP :V1.0 -1- SP5718AP 、 SP5718AP , AC/DC 。SP5718AP 、, TL431。 , CS Rs 。, 。,,。SP5718AP PFM , PWM ,。 SP5718AP ,(OCP),.CX7131 - High-precision primary-side feedback switching PowerSupply
CX7131 DATA SHEET CX7131 :V2.4 V 2.4 -1- CX7131 、 CX7131, AC/DC 。CX7131 、, TL431。 , CS Rs 。, 。,,。CX7131 PFM , PWM ,。 CX7131,(OCP),VDD (.NEXCW104Z5.5V10.7X5.5TRF - V-Chip Memory Back-Up Capacitors
V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FI.NEDZH307Z2.5V35X50F - Radial Leaded & Snap-in Back-Up Capacitors
Radial Leaded & Snap-in Back-Up Capacitors FEATURES • HIGH POWER • HIGH CAPACITANCE (UP TO 300F) • IDEAL AS POWER SUPPLY BACK-UP CHARACTERISTICS Serie.OB2268 - Flyback switching power supply applications
OB2268/OB2269 OB2268/OB2269 - .: ,, OB2268/OB2269 ,, 。OB2268/OB2269 ,: ▲ :OB2268/OB2269 , ( 1/30 ) 。 ▲: OB2268/OB2269 , 。。 ▲ :OB2268/OB2269 VI.NEXA473Z5.5V15x15.5F - Memory Back-Up Capacitors
Memory Back-Up Capacitors FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • VERY HIGH CURRENT DISCHARGE (UP TO 1 AMP) includes all homogeneous mat.ACT2802B - 5V/2.5A Backup Battery Pack Manager
ACT2802/ACT2802B/ACT2802C Rev 7, 15-Jul-16 5V/2.5A Backup Battery Pack Manager FEATURES Dedicated Single Chip Solution for Mobile Power With Min.OB2269 - Flyback switching power supply applications
OB2268/OB2269 OB2268/OB2269 - .: ,, OB2268/OB2269 ,, 。OB2268/OB2269 ,: ▲ :OB2268/OB2269 , ( 1/30 ) 。 ▲: OB2268/OB2269 , 。。 ▲ :OB2268/OB2269 VI.LM2585 - 3-A Step-Up Wide Vin Flyback Converter
Product Folder Order Now Technical Documents Tools & Software Support & Community LM2585 SNVS120G – APRIL 2000 – REVISED MAY 2019 LM2585 4-V to .MP5514 - High-Efficiency Bidirectional Power Backup Manager
MP5514 Wide 2.7V to 18V VIN, 5A, High-Efficiency Bidirectional Power Backup Manager with Hot-Swap, I2C, ADC, and Capacitor Health Test DESCRIPTION Th.MP5514GU - High-Efficiency Bidirectional Power Backup Manager
MP5514 Wide 2.7V to 18V VIN, 5A, High-Efficiency Bidirectional Power Backup Manager with Hot-Swap, I2C, ADC, and Capacitor Health Test DESCRIPTION Th.NEXCW224Z5.5V10.7X8.5TRF - V-Chip Memory Back-Up Capacitors
V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FI.NEXCW104Z3.5V10.7X5.5TRF - V-Chip Memory Back-Up Capacitors
V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FI.NEXC474Z5.5V16X9.5TRF - V-Chip Memory Back-Up Capacitors
V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FI.NEXC474Z3.5V10.5X8.5TRF - V-Chip Memory Back-Up Capacitors
V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FI.NEXC224Z3.5V10.5X5.5TRF - V-Chip Memory Back-Up Capacitors
V-Chip Memory Back-Up Capacitors FEATURES • DOUBLE LAYER CONSTRUCTION • POWER BACK-UP FOR CMOS DEVICES • SURFACE MOUNTABLE V-CHIP STYLE • LEAD-FREE FI.NEXA105Z5.5V44.5x18.5F - Memory Back-Up Capacitors
Memory Back-Up Capacitors FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • VERY HIGH CURRENT DISCHARGE (UP TO 1 AMP) includes all homogeneous mat.NEXA474Z11V44.5x28.5F - Memory Back-Up Capacitors
Memory Back-Up Capacitors FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • VERY HIGH CURRENT DISCHARGE (UP TO 1 AMP) includes all homogeneous mat.NEXA474Z5.5V36.5x16.5F - Memory Back-Up Capacitors
Memory Back-Up Capacitors FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • VERY HIGH CURRENT DISCHARGE (UP TO 1 AMP) includes all homogeneous mat.NEXA104Z5.5V21.5x15.5F - Memory Back-Up Capacitors
Memory Back-Up Capacitors FEATURES RoHS • DOUBLE LAYER CONSTRUCTION Compliant • VERY HIGH CURRENT DISCHARGE (UP TO 1 AMP) includes all homogeneous mat.