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W25Q128FV 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: May 13, 2016 Revision M W25Q128FV Table of Contents 1.

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BL24C02F 2Kbits (256×8) Features  Compatible with all I²C bidirectional data transfer protocol  Memory array: – 2 Kbits (256bytes) of EEPROM – Pag

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 Rev. 0.7 Preliminary LY68L6400 64M Bits Serial Pseudo-SRAM with SPI and QPI 1 TABLE OF CONTENTS 1 TABLE OF CONTENTS ……………………………………………………………. 0

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Preliminary Data Sheet March 2000 ORCA® ORT4622 Field-Programmable System Chip (FPSC) Four-Channel x 622 Mbits/s Backplane Transceiver Introduction L

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4G B Die DDRIII SDRAM Specification P3P4GF4BLF Deutron Electronics Corp. 8F, 68, Sec. 3, NanKing E. RD., Taipei 104, Taiwan, R.O.C. TEL: (886)-2-251

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Preliminary Data Sheet January 1998 LG1628AXA SONET/SDH 2.488 Gbits/s Transimpedance Amplifier Features s s s s s s High data rate: 2.5 Gbits/s High

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W25Q128FV 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: May 13, 2016 Revision M W25Q128FV Table of Contents 1.

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Data Sheet August 2001 ORCA® ORT8850 Field-Programmable System Chip (FPSC) Eight-Channel x 850 Mbits/s Backplane Transceiver Introduction Field-progr

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W25Q128FV 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: May 13, 2016 Revision M W25Q128FV Table of Contents 1.

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W25Q128FV 3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI Publication Release Date: May 13, 2016 Revision M W25Q128FV Table of Contents 1.

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IS42SM32100C IS42RM32100C IS42VM32100C 512K x 32Bits x 2Banks Low Power Synchronous DRAM Description These IS42SM/RM/VM32100C are low power 33,554,43

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P25C128F 128 Kbits Serial SPI bus EEPROM Datasheet Rev.1.3 General Description The P25C128F is Serial Peripheral Interface (SPI) compatible EEPROM (

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PRELIMINARY DATA SHEET 512M bits SDRAM EDS5104ABTA (128M words × 4 bits) EDS5108ABTA (64M words × 8 bits) EDS5116ABTA (32M words × 16 bits) Descripti

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IS42/45SM/RM/VM32160E 4M x 32Bits x 4Banks Mobile Synchronous DRAM Description These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou

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K9K8G08U1M K9F4G08U0M FLASH MEMORY K9XXG08UXM INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WI

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IS43/46LR32160C 4M x 32Bits x 4Banks Mobile DDR SDRAM Description The IS43/46LR32160C is 536,870,912 bits CMOS Mobile Double Data Rate Synchronous D

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Features • One of a Family of Devices with User Memory of 1 Kbit to 64 Kbits • Contactless 13.56 MHz RF Communications Interface – ISO/IEC 14443-2:200

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MS90C385 MS90C385 ——100MHz 24bit （FPD）LVDS MS90C385 28bit TTL 4 （LVDS）。 。 100MHz ，24bit RGB 、3bit LCD 1bit 700Mbps LVDS 。 100MHz ， 350Mby

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