Winbond
25Q128FVSQ - 3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(60 views)
Winbond
25Q128FVPQ - 3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(29 views)
Winbond
25Q128FVIQ - 3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(28 views)
Giantec Semiconductor
GT24C1024 - 2-WIRE 1024K Bits Serial EEPROM
GT24C1024
GT24C1024 2-WIRE
1024K Bits Serial EEPROM
Copyright © 2013 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves the
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Toshiba
TC58FVB800 - 8 MBIT (1M x 8 BITS / 512K x 16 BITS) CMOS FLASH MEMORY
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Ruimeng Technology
MS90C386B - 24bits COLOR LVDS Receiver
MS90C386B
MS90C386B
——+3.3V 175MHz 24bits COLOR LVDS Receiver
General Description
The MS90C386B receiver is designed to support pixel data transmissio
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Sanyo
LC36256AL-85 - 256 K (32768 words x 8 bits) SRAM
Ordering number : EN4163A
Asynchronous Silicon Gate CMOS LSI
LC36256AL, AML-70/85/10/12
256 K (32768 words × 8 bits) SRAM
Overview
The LC36256AL, A
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Sanyo Semicon Device
LE28FV4001T - 4MEG (52488 x 8 Bits) Flash Memory
Ordering number : EN*5468
CMOS LSI
LE28FV4001M, T, R-20/25
4MEG (52488 × 8 Bits) Flash Memory
Preliminary Overview
The LE28FV4001M, T, R Series are
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Winbond
W9412G6IH - 2M X 4 BANKS X 16 BITS DDR SDRAM
www.DataSheet.co.kr
W9412G6IH 2M × 4 BANKS × 16 BITS DDR SDRAM
Table of Contents1. 2. 3. 4. 5. 6. 7. GENERAL DESCRIPTION
(14 views)
Winbond
25Q128FVSG - 3V 128M-BITSERIAL FLASH MEMORY
W25Q128FV
3V 128M-BIT SERIAL FLASH MEMORY WITH DUAL/QUAD SPI & QPI
Publication Release Date: May 13, 2016 Revision M
W25Q128FV
Table of Contents
1.
(13 views)
ISSI
IS45VM16160E - 4M x 16Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM16160E
4M x 16Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM16160E are mobile 268,435,456 bits CMOS Synchronou
(12 views)
NEC
UPD77015 - 16 bits/ Fixed-point Digital Signal Processor
DATA SHEET
MOS INTEGRATED CIRCUIT
µPD77015,77017,77018
16 bits, Fixed-point Digital Signal Processor
µPD77015, 77017, 77018 are 16 bits fixed-point
(12 views)
BELLING
BL24CM2A - 2M-Bits EEPROM
BL24CM2A 2M bits (262,144×8)
Features
⚫ Compatible with all I2C bidirectional data transfer protocol
⚫ Memory array: – 2048 Kbits (256 Kbytes) of EEP
(12 views)
Giantec Semiconductor
GT24C32B - 2-WIRE 32K Bits Serial EEPROM
GT24C32B
Advanced
GT24C32B 2-WIRE 32K Bits
Serial EEPROM
Copyright © 2014 Giantec Semiconductor Inc. (Giantec). All rights reserved. Giantec reserves
(11 views)
ISSI
IS42VM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM
IS42/45SM/RM/VM32160E
4M x 32Bits x 4Banks Mobile Synchronous DRAM
Description
These IS42/45SM/RM/VM32160E are mobile 536,870,912 bits CMOS Synchronou
(11 views)
ISSI
IS46LR32640A - 16M x 32Bits x 4Banks Mobile DDR SDRAM
IS43/46LR32640A
16M x 32Bits x 4Banks Mobile DDR SDRAM
Description
The IS43/46LR32640A is 2,147,483,648 bits CMOS Mobile Double Data Rate Synchronous
(11 views)
Winbond
W9825G6KH - 4M x 4-BANKS x 16-BITS SDRAM
W9825G6KH
4 M 4 BANKS 16 BITS SDRAM
Table of Contents-
1.
GENERAL DESCRIPTION
(11 views)
Agere Systems
ORT4622 - Field-Programmable System Chip (FPSC) Four-Channel x 622 Mbits/s Backplane Transceiver
Preliminary Data Sheet March 2000
ORCA® ORT4622 Field-Programmable System Chip (FPSC) Four-Channel x 622 Mbits/s Backplane Transceiver
Introduction
L
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ETC
UC62LS2008 - Low Power CMOS SRAM 256K X 8 Bits
www.DataSheet4U.com
Low Power CMOS SRAM 256K X 8 Bits
Description
UC62LS2008 -20/-25
Features:
• Vcc operation voltage : 3.0V ~ 3.6V • Low power co
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Texas Instruments
LSF0204D - 4-Bits Bidirectional Multi-Voltage Level Translator
LSF0204, LSF0204D
SLVSCP5H – JULY 2014 – REVISED APRIL 2021
LSF0204x 4-Bits Bidirectional Multi-Voltage Level Translator for Open-Drain and Push-Pull
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