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DATASHEET UF4SC120023B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 23 mohm Rev. B, January 2025 Description Ta

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 150 mohm UJ3C120150K3S Description This SiC FET device is based on a

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO247‐4, 1200 V, 150 mohm UF3C120150K4S Description This SiC cascode JFET co-packages

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DATASHEET Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TOLL, 750 V, 18 mohm Rev B, January 2025 UJ4SC075018L8S TAB 1 8 TAB 8 1

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DATASHEET UF4SC120023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 1200 V, 23 mohm Rev. B, January 2

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N-Channel, TO247-3, 1200 V, 35 mohm UJ3C120040K3S Description This SiC FET device is based on a u

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DATASHEET UF3C120150B7S Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, D2PAK-7L, 1200 V, 150 mohm Rev. C, Jan 2025 Description 1 7 T

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DATASHEET Silicon Carbide (SiC) Cascode JFET Module - EliteSiC, Half-Bridge Module, 1200 V, 9.4 mohm Rev. D, January 2025 UHB100SC12E1BC3N Descripti

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DATASHEET UJ4C075033B7S 1 7 Tab G (1) KS (2) D (Tab) S (3-7) Part Number UJ4C075033B7S Package D2PAK-7L Marking UJ4C075033B7S Silicon Carbide (

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600V Cascode GaN FET in TO-247 (source tab) TPH3205WS Not recommended for new designs—see TP65H050WS Description The TPH3205WS 600V, 52mΩ gallium ni

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DATASHEET UJ4C075033L8S TAB 1 8 TAB 8 1 G (1) KS (2) TAB D S (3-8) Part Number UJ4C075033L8S Package MO-229 Marking UJ4C075033 Silicon Car

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Description United Silicon Carbide's cascode products co-package its highperformance G3 SiC JFETs with a cascode optimized MOSFET to produce the only

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-263-7, 650 V, 27 mohm UF3SC065030B7S Description This SiC FET device is based on a

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DATA SHEET www.onsemi.com Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, D2PAK-3, 650 V, 42 mohm UF3C065040B3 TAB 12 3 D2PAK-3 (TO-

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Silicon Carbide (SiC) Cascode JFET - EliteSiC, Power N‐Channel, TO247‐4, 750 V, 18 mohm UJ4C075018K4S Description The UJ4C075018K4S is a 750 V, 18 mW

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DATASHEET UJ4C075018K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 18 mohm Rev. B, January 202

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DATASHEET UJ4C075023K4S CASE CASE D (1) Silicon Carbide (SiC) Cascode JFET EliteSiC, Power N-Channel, TO-247-4L, 750 V, 23 mohm Rev. C, January 202

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650V-42mW SiC Cascode DATASHEET UF3C065040K4S CASE CASE D (1) Rev. A, January 2019 Description United Silicon Carbide's cascode products co-packag

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Silicon Carbide (SiC) Cascode JFET – EliteSiC, Power N-Channel, TO-247-4L, 750 V, 5.9 mohm SiC JFET w/ Si MOSFET UJ4SC075006K4S Description The UJ4SC0

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