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160 Hits
z 3DD1555 is high breakdown
voltage of NPN bipolar transistor.
The main process of manufacture:
high voltage mesa type process,
,
triple diffused ...
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15 Hits
BVces BVcbo BVebo Icbo hFE Cob
θjc
Collector to Emitter Breakdown Collector to Base Breakdown Emitter to Base Breakdown Collector to Base Current ...
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15 Hits
z 3DD2901 is high breakdown µÈЧç·
EQUIVALENT CIRCUIT
voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type pr...
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14 Hits
1 2.0 mm ±0.1 1.75 mm ±0.1
W (CARRIER TAPE SIZE)
F
BO
1.5 MIN
AO USER DIRECTION OF FEED
COVER TAPE SIZE
P1 (PITCH)
0.30 mm ±0.05
KO
COVER TAPE
...
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11 Hits
z 3DD5038 is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type process,
µÈЧç·
EQUIVALENT C...
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10 Hits
z 3DD5024PNPN z 3DD5024P is high breakdown
, voltage of NPN bipolar
: transistor.The main process of
、 manufacture:high voltage planar
, process...
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10 Hits
123
z3DD5011 NPN z 3DD5011 is high breakdown , voltage of NPN bipolar transistor. EQUIVALENT CIRCUIT
The main process of manufacture:
: high v...
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9 Hits
z 3DD2102 is high breakdown µÈЧç·
EQUIVALENT CIRCUIT
voltage of NPN bipolar transistor. The main process of manufacture: high voltage mesa type pr...
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8 Hits
z 3DD1555A is high breakdown voltage of NPN bipolar transistor. The main process of manufacture: high voltage plane type process, triple diffused proc...
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