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PJM10C30PA N and P-Channel Complementary Power MOSFET Product Summary ⚫ N-Channel ⚫ VDS= 30V,ID= 12A ⚫ RDS(on)< 15mΩ @VGS= 10V ⚫ RDS(on)< 20mΩ @VGS=

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PNP - 2N6040, 2N6042, NPN - 2N6043, 2N6045 Plastic Medium-Power Complementary Silicon Transistors Plastic medium−power complementary silicon transist

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HIP5010, HIP5011 Data Sheet March 1996 File Number 4029.5 7V, 17A SynchroFET™ Complementary Drive Synchronous Half-Bridge Designed with the P6 and Pe

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2N2256, 2N2257 (SILICON) 2N2258 {GERMANIUM} 2N2259 (GERMANIUM) CASE 22 (TO-18) Collector connected to cese NPN silicon and PNP germanium mesa comple

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2N5758 2N5759 2N5760 NPN 2N6226 2N6227 2N6228 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTR

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BDX53B, BDX53C (NPN), BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amp

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BD135 - BD136 BD139 - BD140 Complementary low voltage transistor Features ■ Products are pre-selected in DC current gain Application ■ General purpos

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD243B/D Complementary Silicon Plastic Power Transistors . . . designed for use in gen

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ADVANCED LINEAR DEVICES, INC. COMPLEMENTARY N-CHANNEL AND P-CHANNEL MOSFET ALD1115 GENERAL DESCRIPTION The ALD1115 is a monolithic complementary N-c

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D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features ■ Low collector-emitter saturation voltage ■ Fast switching speed Applications

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Complementary Silicon Power Transistors D44H Series (NPN), D45H Series (PNP) These series of plastic, silicon NPN and PNP power transistors can be use

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® TIP140/141/142 TIP145/146/147 COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS s s s s TIP141, TIP142, TIP145 AND TIP147 ARE STMicroelectroni

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® TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A a

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ZXMC3A16DN8 COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET SUMMARY N-Channel V(BR)DSS = 30V; RDS(ON) = 0.035 ; ID= 6.4A P-Channel V(BR)DSS = -30V; RDS(ON)

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MJ15003 (NPN), MJ15004 (PNP) Complementary Silicon Power Transistors The MJ15003 and MJ15004 are power transistors designed for high power audio, disk

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJH6282/D Darlington Complementary Silicon Power Transistors . . . designed for genera

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NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resistors Features: D Built–In Bias Resistor (R1 = 47kΩ,

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NTE2566 (NPN) & NTE2567 (PNP) Silicon Complementary Transistors High Current, High Speed Switch Features: D Low Saturation Voltage D Fast Switching Sp

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2N3055 NPN MJ2955 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3055 and

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MJB41C, NJVMJB41CT4G (NPN), MJB42C, NJVMJB42CT4G (PNP) Complementary Silicon Plastic Power Transistors D2PAK for Surface Mount Features • Lead Formed

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