MJ2955
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Complementary silicon power transistors. The CENTRAL SEMICONDUCTOR 2N3055 and MJ2955 are complementary silicon power transistors manufactured by the epitaxial base process,
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MJ2955 - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volta.
MJ2955 - Complementary Power Transistors
(Multicomp)
2N3055, MJ2955
Complementary Power Transistors
Designed for use in general-purpose amplifier and switching applications.
Features:
• Power dissipation.
MJ2955 - PNP SILICON POWER TRANSISTORS
(COMSET)
MJ2955
PNP SILICON POWER TRANSISTORS
The MJ2955 is a silicon Planar Epitaxial NPN transistor in Jedec TO-3 metal case. Designed for general purpose,.
MJ2955 - Silicon PNP Transistor
(NTE)
MJ2955 Silicon PNP Power Transistor Audio Power Amp, Medium Speed Switch
TO−3 Type Package
Description: The MJ2955 is a silicon PNP transistor in a T.
MJ2955 - Complementary Silicon Power Transistors
(ST Microelectronics)
TAB
1 2
TO-3 Figure 1. Internal schematic diagram
2N3055, MJ2955
Complementary power transistors
Datasheet - production data
Features
• Low collector.
MJ2955 - 15 AMPERE POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3055/D
Complementary Silicon Power Transistors
. . . designed for general–purpose sw.
MJ2955 - Complementary Silicon Power Transistors
(ON Semiconductor)
Complementary Silicon Power Transistors
2N3055(NPN), MJ2955(PNP)
Complementary silicon power transistors are designed for general−purpose switching a.
MJ2955A - 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by 2N3055A/D
Complementary Silicon High-Power Transistors
. . . PowerBase plementary t.
MJ2955A - SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
MJ2955A
..
DESCRIPTION ·With TO-3 package ·Complement.
MJ2955A - PNP Transistor
(INCHANGE)
isc Silicon PNP Power Transistors
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Volt.