MJ2955G Datasheet - ON Semiconductor

MJ2955G Complementary Silicon Power Transistors

MJ2955G Features

* DC Current Gain

* hFE = 20

* 70 @ IC = 4 Adc

* Collector

* Emitter Saturation Voltage

* VCE(sat) = 1.1 Vdc (Max) @ IC = 4 Adc

* Excellent Safe Operating Area

* Pb

* Free Packages are Available

* MAXIMUM RATINGS Rating Symbol

Datasheet Details

MJ2955G

190.96 KB

Complementary silicon power transistors.

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