Datasheet4U Logo Datasheet4U.com

MJ21194 - NPN Transistor

MJ21194 Description

Silicon NPN Power Transistor MJ21194 .
Excellent Safe Operating Area. DC Current Gain- : hFE= 25-75@IC = 8A,VCE= 5V. Collector-Emitter Saturation Voltage- : VCE(sat)= 1.

MJ21194 Applications

* Designed for high power audio output, disk head positioners and other linear applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Con

📥 Download Datasheet

Preview of MJ21194 PDF
datasheet Preview Page 2

Datasheet Details

Part number
MJ21194
Manufacturer
INCHANGE
File Size
203.09 KB
Datasheet
MJ21194-INCHANGE.pdf
Description
NPN Transistor

📁 Related Datasheet

  • MJ21194G - Metal Package Power Transistor (Thinki Semiconductor)
  • MJ21193 - 16 ampere complementary silicon power transistors (Motorola)
  • MJ21193G - Metal Package Power Transistor (Thinki Semiconductor)
  • MJ21195 - Complementary Silicon Power Transistors (ON)
  • MJ21195G - 250 Watt Silicon Type Metal Package Power Transistor (Thinki Semiconductor)
  • MJ21196 - Complementary Silicon Power Transistors (ON)
  • MJ21196G - 250 Watt Silicon Type Metal Package Power Transistor (Thinki Semiconductor)
  • MJ21294 - NPN Silicon Power Transistor (ON Semiconductor)

📌 All Tags

INCHANGE MJ21194-like datasheet