MJ2501 PNP Transistor

INCHANGE

Description

isc Silicon PNP Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 1000 (Min) @ IC = -5A. Collector-Emitter Breakdown Voltage- V(BR)CEO=.

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Datasheet Specifications

Part number: MJ2501
Manufacturer: INCHANGE
File Size: 202.06 KB
Datasheet: MJ2501-INCHANGE.pdf
Description: PNP Transistor

Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -80 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -C

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MJ2501 PNP Transistor INCHANGE

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