MJ2501 Datasheet - INCHANGE

MJ2501 PNP Transistor

*Built-in Base-Emitter Shunt Resistors *High DC current gain- hFE = 1000 (Min) @ IC = -5A *Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) *Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS *Designed for use as output device.

MJ2501 Datasheet (202.06 KB)

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Datasheet Details

Part number:

MJ2501

Manufacturer:

INCHANGE

File Size:

202.06 KB

Description:

Pnp transistor.

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