MJ21195G Datasheet (Thinki Semiconductor) - 250 Watt Silicon Type Metal Package Power Transistor

MJ21195G, 250 Watt Silicon Type Metal Package Power Transistor

MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications.

Total Harmonic Distortion Characterized High DC Current Gain hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Second SCHEMATIC PNP C