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MJ21196G, MJ21195G Datasheet - Thinki Semiconductor

MJ21196G 250 Watt Silicon Type Metal Package Power Transistor

MJ21195G/MJ21196G ® Pb Free Plating Product MJ21195G/MJ21196G Pb 250 Watt Silicon Type Metal Package Power Transistor The MJ21195 and MJ21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear applications. Total Harmonic Distortion Characterized High DC Current Gain hFE = 25 Min @ IC = 8 Adc Excellent Gain Linearity High SOA: 3 A, 80 V, 1 Second SCHEMATIC PNP C.

MJ21195G-ThinkiSemiconductor.pdf

This datasheet PDF includes multiple part numbers: MJ21196G, MJ21195G. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

MJ21196G, MJ21195G

Manufacturer:

Thinki Semiconductor

File Size:

335.03 KB

Description:

250 watt silicon type metal package power transistor.

Note:

This datasheet PDF includes multiple part numbers: MJ21196G, MJ21195G.
Please refer to the document for exact specifications by model.

MJ21196G Distributor

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MJ21196G MJ21195G 250 Watt Silicon Type Metal Package Power Transistor Thinki Semiconductor