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MJ2500 PNP Transistor

MJ2500 Description

isc Silicon PNP Darlingtion Power Transistor .
Built-in Base-Emitter Shunt Resistors. High DC current gain- hFE = 1000 (Min) @ IC = -5A. Collector-Emitter Breakdown Voltage- V(BR)CEO=.

MJ2500 Applications

* Designed for use as output devices in complementary general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current -C

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Datasheet Details

Part number
MJ2500
Manufacturer
INCHANGE
File Size
202.18 KB
Datasheet
MJ2500-INCHANGE.pdf
Description
PNP Transistor

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PNP Transistor INCHANGE
INCHANGE MJ2500-like datasheet