MJ2501
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Complementary silicon power darlington transistors. te cThe MJ2501 is a Silicon Epitaxial-Base PNP le upower transistors in monolithic Darlington dconfiguration, mounted in Jedec TO-3 m
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MJ2500 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 1000 (Min) @ IC = -5A ·C.
MJ2500 - 10 AMPERE DARLINGTON POWER TRANSISTORS
(Motorola)
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJ2500/D
MJ2955 (See 2N3055) MJ2955A (See 2N3055A)
Medium-Power Complementary Silicon.
MJ2500 - (MJ2500 / MJ2501) SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package .. ·DARLINGTON ·High DC c.
MJ2500 - (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS
(Comset Semiconductors)
PNP MJ2500 – MJ2501
COMPLEMENTARY POWER DARLINGTONS
The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington .
MJ2500 - PNP Transistor
(DIGITRON)
MJ2500-MJ2501-PNP MJ3000-MJ3001-NPN
High-reliability discrete products and engineering services since 1977
COMPLEMENTARY SILICON DARLINGTON POWER TR.
MJ2500 - Silicon complementary trasistors
(Central Semiconductor)
.
MJ2501 - Medium-power complementary Silicon Transistors
(Multicomp)
MJ2501 & MJ3001
10A, 150W, 80V
Features:
• Medium-power plementary Silicon Transistors for use as output devices in plementary general purpose a.
MJ2501 - (MJ2500 / MJ2501) SILICON POWER TRANSISTOR
(SavantIC)
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
DESCRIPTION ·With TO-3 package .. ·DARLINGTON ·High DC c.
MJ2501 - (MJ2500 / MJ2501) COMPLEMENTARY POWER DARLINGTONS
(Comset Semiconductors)
PNP MJ2500 – MJ2501
COMPLEMENTARY POWER DARLINGTONS
The MJ2500, and MJ2501 are silicon epitaxial-base PNP power transistors in monolithic Darlington .
MJ2501 - PNP Transistor
(INCHANGE)
isc Silicon PNP Darlingtion Power Transistor
DESCRIPTION ·Built-in Base-Emitter Shunt Resistors ·High DC current gain-
hFE = 1000 (Min) @ IC = -5A ·C.
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