* Total Harmonic Distortion Characterized
* High DC Current Gain
* Excellent Gain Linearity
* High SOA
* These Devices are Pb
* Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Collector
* Emitter Voltage Collector
* Base Voltage Emitter
* Base Vo
MJ21196G Datasheet (228.76 KB)
MJ21196G
228.76 KB
Silicon power transistors.
Silicon Power Transistors
MJ21195G - PNP MJ21196G - NPN
The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed .
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