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MJ21196G, MJ21195G Silicon Power Transistors

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Description

Silicon Power Transistors MJ21195G - PNP MJ21196G - NPN The MJ21195G and MJ21196G utilize Perforated Emitter technology and are specifically designed .

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This datasheet PDF includes multiple part numbers: MJ21196G, MJ21195G. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
MJ21196G, MJ21195G
Manufacturer
ON Semiconductor ↗
File Size
228.76 KB
Datasheet
MJ21195G-ONSemiconductor.pdf
Description
Silicon Power Transistors
Note
This datasheet PDF includes multiple part numbers: MJ21196G, MJ21195G.
Please refer to the document for exact specifications by model.

Features

* Total Harmonic Distortion Characterized
* High DC Current Gain
* Excellent Gain Linearity
* High SOA
* These Devices are Pb
* Free and are RoHS Compliant
* MAXIMUM RATINGS Rating Collector
* Emitter Voltage Collector
* Base Voltage Emitter
* Base Vo

MJ21196G Distributors

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