Part Number | Description | Manufacture |
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1- to 4-Cell Hybrid Power Boost Mode Battery Charge Controller •1 Industrial Innovative Charge Controller With Hybrid Power Boost Mode – Adapter and Battery Provides Power to System Together for Intel® CPU Turbo Mode – Ultra-Fast Transient Response of 150 µs to Enter Boost Mode – Hybrid Power Boost Mode from 4.5 |
![]() Texas Instruments |
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NPN Transistor I Low current I Low voltage I Three different gain selections 1.3 Applications I General-purpose switching and amplification 1.4 Quick reference data Table 2. Symbol VCEO IC hFE Quick reference data Parameter Conditions collector-emitter voltag |
![]() NXP |
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NPN Transistor ■ High breakdown voltage VCEO = 140 V ■ Typical ft = 20 MHz ■ Fully characterized at 125 oC Application ■ Power supply Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The |
![]() STMicroelectronics |
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SPW47N60C3 11 Please note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUP |
![]() Infineon Technologies |
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NPN Transistor • Low current (max. 100 mA) • Low voltage (max. 65 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package. PNP complements: BC556 and BC557. PINNING PIN 1 2 3 emitter base collec |
![]() Philips |
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7-Segment Display Decoder OFF OFF BI any any any any any any 0 OFF OFF OFF OFF OFF OFF OFF RBI 1 0 0 0 0 0 0 OFF OFF OFF OFF OFF OFF OFF LT 0 any any any any any 1 ON ON ON ON ON ON ON Notes: 1. BI must be high when output functions 0 through 15 are desired. RBI must |
![]() ETC |
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NPN Transistor C546A/BC546B/BC546C VCBO IC = 100uA, IE = 0 BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Emitter Base Voltage BC546/BC546A/BC546B/BC546C VEBO IE = 10uA, IC = 0 BC547/BC547A/BC547B/BC547C BC548/BC548A/BC548B/BC548C Collector Cut off |
![]() RECTRON |
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Dual Positive-Edge-Triggered D-Type Flip-Flops ircuit (SOIC), JEDEC MS-012, 0.150" Narrow DM7474N N14A 14-Lead Plastic Dual In Line Package (PDIP), JEDEC MS-001, 0.300" Wide Devices also available in Tape and Reel. Specify by appending the suffix letter “X” to the ordering code. Connection D |
![]() Fairchild |
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AOD478 =70°C PDSM 2.1 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 175 G D S Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Sy |
![]() Alpha & Omega Semiconductors |
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Silicon NPN Transistor esign the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 |
![]() Toshiba Semiconductor |
Total 24655 results |