| Part Number | Description | Manufacture |
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(MJE13005 Series) Silicon NPN Power Transistor — — 4 2.0 Typ. — — — — — — — 2.5 Max. 10 10 — 30 1.5 1.6 — 4.0 V V MHz us Unit uA uA V ICBO IEBO VCEO hFE VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS VCE=10V, IC=0.5A IB1=-IB2=0.5A, Page 1/1 © 2006 Thinki Semiconductor Co.,Ltd. http: |
 Thinki Semiconductor |
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POWER TRANSISTOR |
 Daesan Electronics |
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(MJE13005 Series) Silicon NPN Power Transistor — 4 2.0 Typ. — — — — — — — 3.0 Max. 10 10 — 30 1.0 1.5 — 4.0 V V MHz us Unit uA uA V ICBO IEBO VCEO hFE VCE(sat) IC=4.0A,IB=1.0A VBE(sat) IC=2.0A,IB=0.5A fT tS VCE=10V, IC=0.5A IB1=-IB2=0.5A, Page 1/1 © 2006 Thinki Semiconductor Co.,Ltd. http:// |
Thinki Semiconductor |
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Switchmode Series NPN Silicon Power Transistors VCEO(SUS) ≥ 400V @ lC = 10 mA, lB = 0 VCE(sat) = 1.0V (Max.) @ lC = 4 A, lB = 1 A Switching time - tf = 0.9 µs (Max.) @ lC = 2 A 700V blocking capability 1 2 3 TO-220AB (MJE13005A) DESCRIPTION T hese devices are designed for high-voltage, high-spee |
 nELL |
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KSE13005 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs Ty |
 Fairchild Semiconductor |
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TO-220C Silicon NPN Power Transistor |
 Inchange Semiconductor |
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EPITAXIAL PLANAR NPN TRANSISTOR ication R : 18~27, O : 23~35 VCB=700, IE=0 VEB=9V, IC=0 IC=10mA, IE=0 IE=1mA, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=1A, IB=0.2A IC=2A, IB=0.5A IC=4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=1MHz 2014. 2. 07 Revision No : 3 MIN. - 800 10 18 8 |
 KEC |
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Silicon diffused power transistor and benefits • Fast switching • High voltage capability of 700 V • Low thermal resistance 3. Applications • Electronic lighting ballasts 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VCESM peak c |
 WeEn |
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NPN SILICON TRANSISTOR O ICEO IEBO hFE VCE(sat) V BE - 10 00 - 1000 10 1000 40 V V V _ _ _ 1.0 1.25 Base-Emitter Saturation Voltage Fall Time Storage Time Freqency Characteristics V BE (sat) Ic=2A tf ts fT 1.2 0.9 S S MHz Ic=2A IB1=- IB2=0.4A 5 - 4 V CE=10V, |
 Wing Shing Computer Components |
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TRIPLE DIFFUSED NPN TRANSISTOR 4A, IB=1A IC=1A, IB=0.2A IC=2A, IB=0.5A VCB=10V, f=1MHz VCE=10V, IC=0.5A Storage Time tstg Fall Time Diode Forward Voltage tf VF *Reverse recovery tims (di/dt=10A/ S) trr *Pulse Test : Pulse Width = 5mS, Duty cycles 10% IF=2A IF=0.4A IF=1A IF |
KEC |
| Total 63 results |
