MJE13005D
MJE13005D is TO-220C Silicon NPN Power Transistor manufactured by Inchange Semiconductor.
DESCRIPTION
- High Voltage Capability
- High Speed Switching
- Wide Area of Safe Operation
APPLICATIONS
- Fluorescent lamp
- Electronic ballast
- Electronic transformer
- Switch mode power supply
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
700 V
VCEO
Collector-Emitter Voltage
400 V
VEBO
Emitter-Base Voltage
9V
IC Collector Current-Continuous
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature
4A 75 W 150 ℃ -55~150 ℃ isc website：.iscsemi.
1 isc & iscsemi is registered trademark
INCHANGE Semiconductor
Silicon NPN Power Transistor
Product Specification
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10m A ;IB= 0
MIN TYP MAX UNIT 400 V
V(BR)EBO Emitter-Base Breakdown...
