| Part number | MJE13005D |
|---|---|
| Download | MJE13005D Datasheet (PDF) |
| File Size | 216.92 KB |
| Manufacturer | Inchange Semiconductor |
| Description | TO-252 NPN Transistor |
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| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
MJE13005D | TO-220C Silicon NPN Power Transistor |
Unisonic Technologies |
MJE13005D | NPN SILICON TRANSISTOR |
KEC |
MJE13005D | TRIPLE DIFFUSED NPN TRANSISTOR |
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KEC |
MJE13005DC | TRIPLE DIFFUSED NPN TRANSISTOR |
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KEC |
MJE13005DF | EPITAXIAL PLANAR NPN TRANSISTOR |
1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.5A ICBO Collector Cutoff Current VCB= 700V;.
