Datasheet Details
| Part number | MJE13005D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.92 KB |
| Description | TO-252 NPN Transistor |
| Datasheet | MJE13005D_INCHANGE.pdf |
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Overview: Isc Silicon NPN Power Transistor.
| Part number | MJE13005D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 216.92 KB |
| Description | TO-252 NPN Transistor |
| Datasheet | MJE13005D_INCHANGE.pdf |
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·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 65 W 150 ℃ Tstg Storage Temperature -55~150 ℃ MJE13005D isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A;
IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2A;
IB= 0.5A ICBO Collector Cutoff Current VCB= 700V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE13005D | TO-220C Silicon NPN Power Transistor | Inchange Semiconductor |
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MJE13005D | NPN SILICON TRANSISTOR | UTC |
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MJE13005D | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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MJE13005DC | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
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MJE13005DF | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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