Inchange Semiconductor MJE13005D
The information contained herein is presented only as a guide for the applications of our products. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.| Part No. | MJE13005D |
|---|---|
| Datasheet | MJE13005D Download |
| Manufacturer |  Inchange Semiconductor |
| Description | TO-252 NPN Transistor |
| Buy | Stock & Price |
DESCRIPTION
●High Voltage Capability●High Speed Switching
●Wide Area of Safe Operation
●Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS
●Fluorescent lamp●Electronic ballast
●Electronic transformer
●Switch mode power supply
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 65 W 150 ℃ Tstg Storage Temperature -55~150 ℃ MJE13005D isc website： 1 isc & iscsemi is registered trademark isc Silicon NPN Power TransistorELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.5...