| Part number | MJE13005D |
|---|---|
| Datasheet | MJE13005D_INCHANGE.pdf |
| File Size | 216.92 KB |
| Manufacturer | Inchange Semiconductor |
| Description | TO-252 NPN Transistor |
|
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1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ;IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA ;IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.5A ICBO Collector Cutoff Current VCB= 700V;.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
MJE13005D | TO-220C Silicon NPN Power Transistor | Inchange Semiconductor |
 |
MJE13005D | NPN SILICON TRANSISTOR | UTC |
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MJE13005D | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
|
MJE13005DC | TRIPLE DIFFUSED NPN TRANSISTOR | KEC |
|
MJE13005DF | EPITAXIAL PLANAR NPN TRANSISTOR | KEC |
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