The MJE13005D is a TO-220C Silicon NPN Power Transistor. Download the datasheet PDF and view key features and specifications below.
| Part Number | MJE13005D |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATI. . |
| Part Number | MJE13005D |
|---|---|
| Description | NPN SILICON TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview | The UTC MJE13005D is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage, high current capability, high switching speed and high reliability. The UTC MJE1. * High Breakdown Voltage * High Current Capability * High Switching Speed * High Reliability * RoHS-Compliant Product NPN SILICON TRANSISTOR 1 1 TO-220 TO-220F 1 TO-251 1 TO-252 1 TO-126 1 TO-126S INTERNAL SCHEMATIC DIAGRAM 2.Collector 1.Base 3.Emitter www.unisonic.com.tw Copyright © . |
| Part Number | MJE13005D |
|---|---|
| Description | TO-252 NPN Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Fluorescent lamp ·Electro. Saturation Voltage IC= 2A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.5A ICBO Collector Cutoff Current VCB= 700V; IE= 0 IEBO Emitter Cutoff Current VEB= 9V; IC= 0 hFE-1 DC Current Gain IC= 5mA ; VCE= 5V hFE-2 DC Current Gain IC= 1A ; VCE= 5V MJE13005D MIN TYP MAX. |
| Part Number | MJE13005D |
|---|---|
| Description | TRIPLE DIFFUSED NPN TRANSISTOR |
| Manufacturer | KEC |
| Overview | SEMICONDUCTOR TECHNICAL DATA MJE13005D TRIPLE DIFFUSED NPN TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes efficient anti saturation operation. Suitab. CHARACTERISTIC SYMBOL Emitter Cut-off Current DC Current Gain IEBO hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Turn-On Time Storage Time Fall Time Diode Forward Voltage VBE(sat) Cob fT ton tstg. |
| Part Number | Manufacturer | Description |
|---|---|---|
| MJE13005DF | KEC | EPITAXIAL PLANAR NPN TRANSISTOR |
| MJE13005 | Fairchild Semiconductor | NPN Silicon Transistor |
| MJE13005 | Central Semiconductor | NPN SILICON POWER TRANSISTOR |
| E13005-250 | Thinki Semiconductor | Silicon NPN Power Transistor |
| MJE13005 | onsemi | NPN SILICON POWER TRANSISTOR |
| MJE13005 | Inchange Semiconductor | Silicon NPN Power Transistors |
| MJE13005 | Thinki Semiconductor | Silicon NPN Power Transistor |
