Datasheet Details
| Part number | MJE13005 |
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| Manufacturer | Inchange Semiconductor |
| File Size | 211.87 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | MJE13005-InchangeSemiconductor.pdf |
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Overview: isc Silicon NPN Power Transistor.
| Part number | MJE13005 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 211.87 KB |
| Description | Silicon NPN Power Transistors |
| Datasheet | MJE13005-InchangeSemiconductor.pdf |
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·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.6(Max) @ IC= 2.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit- ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCEV Collector-Emitter Voltage 700 VCEO Collector-Emitter Voltage 400 VEBO Emitter-Base Voltage 9 IC Collector Current-Continuous 4 ICM Collector Current-peak 8 Collector Power Dissipation PC Ta=25℃ Collector Power Dissipation TC=25℃ 2 75 Ti Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 1.67 ℃/W 62.5 ℃/W MJE13005 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE13005 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA;
IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 1A ;IB= 0.2A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 2A ;IB= 0.5 A VCE(sat)-3 Collector-Emitter Saturation Voltage IC= 4A ;IB= 1A VBE(sat)-1 Base-Emitter Saturation Voltage IC= 1A ;IB= 0.2A VBE(sat)-2 Base-Emitter Saturation Voltage ICEV Collector Cutoff Current IEBO Emitter Cutoff Current IC= 2A ;IB= 0.5 A VCEV= 700V;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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MJE13005 | NPN PLASTIC POWER TRANSISTORS | CDIL |
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MJE13005 | 4 AMPERE NPN SILICON POWER TRANSISTOR | Motorola |
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MJE13005 | NPN SILICON POWER TRANSISTOR | ON |
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MJE13005 | NPN SILICON POWER TRANSISTORS | UTC |
| MJE13005 | NPN Silicon Transistor | Fairchild Semiconductor |
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