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MJE13005 Datasheet

The MJE13005 is a NPN Silicon Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberMJE13005
ManufacturerFairchild Semiconductor
Overview MJE13004/13005 MJE13004/13005 High Voltage Switch Mode Application • High Speed Switching • Suitable for Switching Regulator and Motor Control 1 TO-220 2.Collector 3.Emitter 1.Base NPN Silicon Tr. C = 2A, IB = 0.5A IC = 4A, IB = 1A IC = 1A, IB = 0.2A IC = 2A, IB = 0.5A VCB = 10V, f = 0.1MHz VCE = 10V, IC = 0.5A VCC = 125V, IC = 2A IB1 = - IB2 = 0.4A RL = 62.5Ω 4 0.8 4 0.9 65 10 8 Min. 300 400 1 60 40 0.5 0.6 1 1.2 1.6 V V V V V pF MHz µs µs µs Typ. Max. Units V V mA IEBO hFE VCE(sat) VBE (s.
Part NumberMJE13005
DescriptionNPN SILICON POWER TRANSISTOR
ManufacturerCentral Semiconductor
Overview The CENTRAL SEMICONDUCTOR MJE13004 and MJE13005 are Silicon NPN Power Transistors, designed for high speed power switching applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL MJE1. E13004) VCE=700V, VBE(OFF)=1.5V (MJE13005) VCE=700V, VBE(OFF)=1.5V, TC=100°C (MJE13005) VEB=9.0V IC=10mA (MJE13004) IC=10mA (MJE13005) IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=4.0A, IB=1.0A IC=2.0A, IB=0.5A, TC=100°C IC=1.0A, IB=0.2A IC=2.0A, IB=0.5A IC=2.0A, IB=0.5A, TC=100°C VCE=5.0V, IC=1.0A VCE=5.0V.
Part NumberMJE13005
DescriptionNPN SILICON POWER TRANSISTOR
Manufactureronsemi
Overview MJE13005 Preferred Device SWITCHMODEt Series NPN Silicon Power Transistors These devices are designed for high−voltage, high−speed power switching inductive circuits where fall t. http://onsemi.com
* VCEO(sus) 400 V
* Reverse Bias SOA with Inductive Loads @ TC = 100_C
* Inductive Switching Matrix 2 to 4 A, 25 and 100_C tc @ 3A,
* 700 V Blocking Capability
* SOA and Switching Applications Information
* Pb−Free Package is Available* MAXIMUM RATINGS Rating Collector−Emitter Vol.
Part NumberMJE13005
DescriptionSilicon NPN Power Transistors
ManufacturerInchange Semiconductor
Overview ·Collector–Emitter Sustaining Voltage : VCEO(SUS) = 400V(Min.) ·Collector Saturation Voltage : VCE(sat) = 0.6(Max) @ IC= 2.0A ·Minimum Lot-to-Lot variations for robust device performance and reliable . al Resistance,Junction to Case Rth j-a Thermal Resistance,Junction to Ambient MAX UNIT 1.67 ℃/W 62.5 ℃/W MJE13005 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor MJE13005 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBO.

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