Datasheet4U Logo Datasheet4U.com

MJE13002 Datasheet Silicon NPN Power Transistors

Manufacturer: Inchange Semiconductor

Overview: Inchange Semiconductor Product Specification Silicon NPN Power.

General Description

¡¤With TO-126 package ¡¤High voltage ,high speed APPLICATIONS ¡¤Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits.

PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13002 ¡¤ Absolute maximum ratings (Tc=25¡æ ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature TC=25¡æ CONDITIONS Open emitter Open base Open collector VALUE 600 300 9 1.5 3 0.75 1.5 2.25 4.5 40 150 -65~150 ¡æ ¡æ UNIT V V V A A A A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.12 UNIT ¡æ/W Free Datasheet http://www.datasheet4u.com/ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25¡æ unles otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector outoput capacitance CONDITIONS IC=10mA ;IB=0 IC=0.5A;

IB=0.1A IC=1A;

MJE13002 Distributor