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MJE13003 - (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS

Download the MJE13003 datasheet PDF. This datasheet also covers the MJE13002 variant, as both devices belong to the same (mje13002 / mje13003) npn epitaxial silicon power transistors family and are provided as variant models within a single manufacturer datasheet.

General Description

Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Juncti

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Note: The manufacturer provides a single datasheet file (MJE13002_CDIL.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MJE13003
Manufacturer CDIL
File Size 167.29 KB
Description (MJE13002 / MJE13003) NPN EPITAXIAL SILICON POWER TRANSISTORS
Datasheet download datasheet MJE13003 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTORS MJE13002 MJE13003 TO-126 Plastic Package Suitable for Switching Regulators, Inverters, Motor Control Solenoid/Relay Drivers and Deflection Circuits ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Continuous Peak Base Current Continuous Peak Emitter Current Continuous Peak Total Power Dissipation @ Ta=25ºC Derate Above 25ºC Total Power Dissipation @ TC=25ºC Derate Above 25ºC Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case Rth (j-c) 3.