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MJE13003K - NPN SILICON POWER TRANSISTOR

General Description

These devices are designed for high voltage, high

speed power switching inductive circuits where fall time is critical.

They are particularly suited for 115 and 220V SWITCHMODE.

Key Features

  • S.
  • Reverse biased SOA with inductive load @ Tc=100°C.
  • Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C.
  • 700V blocking capability.

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Full PDF Text Transcription (Reference)

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UNISONIC TECHNOLOGIES CO., LTD MJE13003K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE. „ FEATURES * Reverse biased SOA with inductive load @ Tc=100°C * Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C Typical tc = 290ns @ 1A, 100°C.